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| 0.2W X, Ku-BAND POWER GaAs MESFET NE960R275 FEATURES * HIGH OUTPUT POWER: 25.0 dBm TYP @ P1 dB * HIGH LINEAR GAIN: 9.0 dB TYP @ 14.5 GHz * HIGH EFFICIENCY: 35% TYP @ 14.5 GHz * HIGH RELIABILITY * CLASS A OPERATION OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 75 1.8 +0.15 -0.05 2 PLACES GATE SOURCE 2.7 2.3 0.5 0.1 DRAIN 2.7 TYP 7.0 3.0 MIN BOTH LEADS DESCRIPTION The NE960R275 is a Power GaAs MESFET covering the 4 GHz to 18 GHz range and is designed for X and Ku Band amplifiers and oscillator applications. The device incorporates WSi (tungsten silicide) gate and silicon dioxide glassivation. NEC's strigent quality assurance and test procedures assure the highest reliability and performance. +0.06 0.1 -0.02 9.8 MAX 2.3 1.13 0.9 MAX ELECTRICAL CHARACTERISTICS (TA PART NUMBER PACKAGE OUTLINE SYMBOLS GL P1dB POUT CHARACTERISTICS Linear Gain Output Power (1 dB) = 25C) NE960R275 75 UNITS dB dBm dBm % C/W A V V 0.09 -2.5 15 0.2 -1.8 22.0 MIN 8.0 TYP 10.0 25.0 24.0 35 60 0.35 -0.5 MAX TEST CONDITIONS VDS = 9 V IDSQ = 90 mA f = 14.5 GHz, Rg = 1K PIN = 15 dBm1 POUT = P1dB1 Channel to Case VDS = 1.5 V, VGS = 0 V VDS = 2.5 V, IDS = 1 mA IGD = 1 mA Functional Characteristics Power Out at Fixed Input Power Power Added Efficiency Thermal Resistance Saturated Drain Current Pinch-off Voltage Gate to Drain Break Down Voltage ADD RTH IDSS Vp BVGD Note: 1. VDS = 9 V, IDSQ = 90 mA, f = 14.5 GHz. Electrical Characteristics California Eastern Laboratories NE960R275 ABSOLUTE MAXIMUM RATINGS1 (TA = 25 C) SYMBOLS VDS VGS Pt ID IGF IGR TCH TSTG PARAMETERS Drain to Source Voltage Gate to Source Voltage Total Power Dissipation Drain Current Gate Current (forward) Gate Current (reverse) Channel Temperature Storage Temperature UNITS V V W mA mA mA C C RATINGS 15 -7 2.5 350 2.5 -2.5 175 -65 to +175 RECOMMENDED OPERATING LIMITS SYMBOLS VDS TCH GCOMP PARAMETERS Drain to Source Voltage Channel Temperature Gain Compression UNITS V C dBcomp MIN TYP MAX 9 9 130 3 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. TYPICAL PERFORMANCE CURVES (TA = 25C) OUTPUT POWER AND EFFICIENCY vs. INPUT POWER 30 60 200 DRAIN CURRENT AND LINEAR GAIN vs. INPUT POWER 14 Output Power, POUT (dBm) Drain Current, ID (mA) 20 30 100 10 15 f = 14.5 GHz (1 tone) VDS = 9 V, IDSQ = 90 mA RG = 1 K 10 5 10 15 20 25 15 50 f = 14.5 GHz (1 tone) VDS = 9 V, IDSQ = 90 mA RG = 1 K 8 0 0 5 10 15 20 25 6 Input Power, PIN (dBm) Input Power, PIN (dBm) GATE CURRENT vs. INPUT POWER 1.5 f = 14.5 GHz (1 tone) VDS = 9 V, IDSQ = 90 mA RG = 1 K Gate Current, IG (mA) 1.0 0.5 0.0 -0.5 5 10 15 20 25 Input Power, PIN (dBm) Linear Gain, GL (dB) Efficiency, ADD (%) 25 45 150 12 NE960R275 TYPICAL SCATTERING PARAMETERS (TA = 25C) NE960R275 VDS = 9.0 V, IDSQ = 90 mA FREQUENCY GHz 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 MAG 0.89 0.86 0.85 0.84 0.81 0.83 0.81 0.75 0.71 0.62 0.48 0.54 0.69 0.80 0.81 S11 ANG -113 -129 -138 -140 -144 -152 -163 -176 166 140 86 20 -20 -45 -66 MAG 3.99 2.88 2.29 1.99 1.78 1.77 1.82 1.89 2.12 2.42 2.50 2.32 1.77 1.30 1.03 S21 ANG 98 80 65 51 39 27 15 0 -19 -44 -78 -113 -144 -166 167 MAG 0.057 0.058 0.057 0.057 0.059 0.060 0.062 0.062 0.064 0.072 0.074 0.065 0.049 0.040 0.039 S12 ANG 34 15 10 7 5 3 3 1 0 -17 -46 -88 -132 -176 149 MAG 0.42 0.46 0.43 0.41 0.44 0.49 0.53 0.52 0.47 0.45 0.50 0.56 0.57 0.61 0.67 S22 ANG -79 -85 -94 -110 -125 -135 -141 -150 -167 164 129 94 68 44 27 START 2 GHz, STOP 16 GHz, STEP 1 GHz 1.0 +90 2.0 S11 0.5 S12 +135 16 GHz 2 GHz +45 0 0.5 1.0 2.0 180 0 2 GHz -0.5 -1.0 16 GHz -2.0 Rmax = 1 -135 -90 -45 Rmax = 0.1 +90 1.0 +45 S21 +135 2 GHz S22 0.5 16 GHz 2.0 16 GHz 180 0 0 0.5 1.0 2.0 2 GHz -135 -90 -45 Rmax = 5 -0.5 -1.0 -2.0 Rmax = 1 EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) * Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE 07/18/2001 |
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